Molecular beam epitaxy of strain-compensated InGaAs/GaAsP quantum-well intersubband photodetectorsBACHER, K; MASSIE, S; SEAFORD, M et al.Journal of crystal growth. 1997, Vol 175-76, pp 977-982, issn 0022-0248, 2Conference Paper

Subnanometer analysis and modeling of MBE grown InP based MODFETsSEAFORD, M; MASSIE, S; HARTZELL, D et al.Journal of electronic materials. 1997, Vol 26, Num 1, pp 30-33, issn 0361-5235Article

Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substratesSEAFORD, M. L; HESSE, P. J; TOMICH, D. H et al.Journal of electronic materials. 1999, Vol 28, Num 7, pp 878-880, issn 0361-5235Article

The use of computer controlled group V valved sources for interface type control in InGaSb/InAs strained layer superlatticesSEAFORD, M. L; SOLOMON, J. S; TOMICH, D. H et al.Journal of electronic materials. 1999, Vol 28, Num 8, pp 955-958, issn 0361-5235Article